$ON — FinTwit mentions on Surfaced

$ON — FinTwit mentions on Surfaced

Recent mentions

43 mentions

@jasonl_capitalJun 2, 2026 · 2:18 PM

NVIDIA is telling you exactly where to invest with its new 800V DC power architecture. The old 48V system can't keep up. 800V reduces copper usage by 45%, cuts the power chain from 5 conversion stages to 2, and cuts power delivery losses in half. These 7 companies are building the power layer underneath it all. 1. $ON - onsemi SiC and GaN chips for high-voltage power conversion across AI and EVs. AI data center revenue nearly doubled YoY and is expected to double again in 2026. The key number: their content per AI rack scales from $15,000 today to $115,000 in next-gen 800V architectures. A 7.7x increase per rack deployed.

@thevalueistJun 1, 2026 · 10:52 AM

$MPWR $ADI $STM $TXN $NVTS $ON EXECUTIVE OVERVIEW The source material is best understood as an NVIDIA MGX 800 VDC power distribution board ecosystem display rather than a GPU, accelerator, or motherboard exhibit. The wall shows 11 named supplier groups participating in 800 VDC rack power delivery: Analog Devices, Delta, Infineon, Innoscience, Megmeet, Monolithic Power Systems, Navitas, onsemi, Renesas, STMicroelectronics, and Texas Instruments. The visible board set spans 800 V hot-swap protection and DC/DC conversion from 800 V to 50 V, 12 V, and 6 V, indicating that the industry is not converging on 1 immediate downstream rail but is instead preparing for a phased, multi-topology transition. NVIDIA frames 800 VDC as a response to the limitations of legacy 54 V rack-level distribution, with the stated objectives of reducing current, copper usage, cable bulk, conversion stages, energy loss, and compute-space power-delivery volume. (NVIDIA) The investment significance is that rack power has become a primary scaling constraint in AI infrastructure, not a secondary component category. The display is a physical manifestation of a platform-level architectural shift: power delivery is being pulled into the same ecosystem-control model as GPUs, networking, cooling, and rack mechanics. NVIDIA has stated that 800 VDC infrastructure is intended to support 1 MW IT racks and beyond starting in 2027, and that full-scale production of 800 VDC data centers is expected to coincide with Kyber rack-scale systems. (NVIDIA Developer) This points to a design-win cycle that is occurring well ahead of revenue recognition, with qualification, safety, reliability, and standards decisions likely to drive relative winners before reported financial contribution becomes visible. The display should not be interpreted as evidence that any 1 supplier has a protected monopoly socket. It argues the opposite. Multiple vendors are shown at each level of the power tree, including hotswap, 50 V conversion, 12 V conversion, and 6 V conversion. NVIDIA appears to be deliberately cultivating a broad, multi-sourced electrical ecosystem to avoid vendor concentration and accelerate availability of qualified designs. This is bullish for the overall AI power-delivery TAM, but it is more nuanced for individual equities: early validation can expand revenue optionality, while eventual open reference designs and multi-sourcing can compress scarcity premiums. TECHNICAL READ-THROUGH The architectural migration is driven by basic power physics. At 1 MW, an 800 V bus carries roughly 1,250 A before conversion losses. The same 1 MW at 54 V would require roughly 18,519 A, and at 48 V roughly 20,833 A. For a constant conductor resistance, I²R loss at 54 V is approximately 219x higher than at 800 V, and at 48 V approximately 278x higher than at 800 V. Real-world systems resize conductors, segment bus paths, and introduce converter losses, so the realized savings are not equal to the pure physics ratio. However, the direction and magnitude of the design pressure are decisive: low-voltage rack distribution becomes increasingly unattractive as racks move from 100 kW-class systems toward hundreds of kilowatts and ultimately 1 MW-class racks. NVIDIA quantifies the benefit of switching from 415 VAC to 800 VDC distribution as 85% more power transmitted through the same conductor size, 45% lower copper requirements, and up to 5% improvement in end-to-end efficiency versus current 54 V systems. (NVIDIA Developer) The image captures the likely transition architecture from current data center power distribution to native high-voltage DC. Today’s data center power chain generally involves medium-voltage utility input, step-down to low-voltage AC, UPS conditioning, AC distribution through PDUs and busways, rack-level AC/DC conversion into a 48 V or 54 V bus, and further conversion near compute trays and processors. NVIDIA’s 800 VDC vision centralizes AC/DC conversion at the facility level, distributes 800 VDC through the data hall, and shifts the critical conversion work to high-density DC/DC converters closer to the compute load. NVIDIA has described the Kyber-era MGX evolution as distributing high voltage directly to each compute node, where a high-ratio 64:1 LLC converter steps down to 12 VDC adjacent to the GPU; NVIDIA also states that this 1-stage conversion is more efficient and occupies 26% less area than traditional multi-stage approaches. (NVIDIA Developer) The visible rails on the display are especially important. 800 V-to-50 V is the least disruptive path because it preserves compatibility with the broad 48 V/54 V ecosystem and existing downstream voltage regulator designs. 800 V-to-12 V is a more aggressive topology that reduces intermediate conversion stages while still feeding a familiar voltage domain. 800 V-to-6 V is the most forward-looking path because it moves the bus voltage closer to the GPU core regulator input and can remove another conversion layer, but it also creates very high current density at the board level. STMicroelectronics explicitly states that 50 V, 12 V, and 6 V intermediate DC buses will coexist in AI data centers depending on rack density, GPU configuration, server form factor, and cooling strategy. (ST News) That is consistent with the display’s structure: this is not a 1-rail standardization event; it is a portfolio of voltage-transition options. The 6 V path should be viewed as high strategic optionality but not a guaranteed universal endpoint. Moving from 12 V to 6 V doubles current for the same power. A 20 kW load at 12 V requires roughly 1,667 A; the same 20 kW at 6 V requires roughly 3,333 A. That increases the importance of converter proximity to the accelerator, low-inductance packaging, busbar design, connector performance, thermal extraction, transient response, and fault isolation. The tradeoff is that 6 V can reduce conversion losses and improve voltage-regulator-stage efficiency when placed close enough to the load. Texas Instruments’ announced NVIDIA-aligned architecture uses only 2 conversion stages from 800 V to GPU core power: an 800 V-to-6 V isolated bus converter followed by a 6 V-to-<1 V multiphase buck converter, with the 800 V-to-6 V converter specified at 97.6% peak efficiency and more than 2,000 W/in³ power density. (Texas Instruments) Navitas separately disclosed an 800 V-to-6 V GaN-based board targeting 96.5% peak efficiency at full load, 1 MHz switching, and 2,100 W/in³ power density. (Navitas Semiconductor) SOURCE MATERIAL OBSERVATIONS The display’s supplier mapping is itself the core data. Analog Devices appears in 800 V hot-swap and 800 V-to-6 V. Delta appears in 800 V hot-swap plus 800 V-to-50 V and 800 V hot-swap plus 800 V-to-12 V. Infineon appears across 800 V hot-swap, 800 V-to-12 V, 800 V-to-50 V, and 800 V-to-6 V. Innoscience appears in 800 V-to-50 V. Megmeet appears in 800 V hot-swap plus 800 V-to-50 V, 800 V hot-swap plus 800 V-to-12 V, and a smaller 800 V-to-12 V implementation. Monolithic Power Systems appears in 800 V hot-swap plus 800 V-to-50 V, 800 V hot-swap plus 800 V-to-12 V, and 800 V-to-6 V. Navitas appears in 800 V-to-6 V. onsemi appears in 800 V-to-12 V. Renesas appears in 800 V-to-50 V and 800 V-to-12 V. STMicroelectronics appears in 800 V-to-50 V, 800 V-to-12 V, and 800 V-to-6 V. Texas Instruments appears in 800 V hot-swap, 800 V-to-12 V, and 800 V-to-6 V. The repeated presence of “hot-swap” labels is a key technical signal. High-voltage DC rack systems require safe insertion, removal, fault isolation, inrush-current management, arc mitigation, telemetry, and fast protection. At 800 VDC, hot-swap is not an ancillary control function; it is a core availability and serviceability requirement. Analog Devices emphasizes rack-level hot-swap protection, high-voltage conversion, digital control, telemetry, and scalable modules for 800 VDC AI infrastructure. (Analog Devices) Infineon describes the move to centralized 800 V HVDC as enabling power conversion directly at the GPU within the server board and highlights the need for silicon, SiC, and GaN expertise from grid to core. (Infineon) The presence of many hot-swap boards suggests that protection, monitoring, and controllability may be among the highest-value analog sockets in the architecture because failure at this layer can compromise rack uptime regardless of converter efficiency. The board-form-factor differences are also informative. Several 800 V-to-6 V examples appear as long, low-profile boards, consistent with a need for low-height, near-load integration. Several hotswap/50 V and hotswap/12 V examples appear larger and more heavily thermally managed, consistent with rack- or tray-level power conversion where heat dissipation and isolation dominate mechanical design. The display does not expose part numbers, power ratings, qualification status, or BOM composition, so exact revenue content cannot be inferred. However, the mix of small control boards, larger conversion modules, and long high-current boards indicates that the opportunity spans controllers, power stages, wide-bandgap devices, magnetics, isolation, sensors, firmware, packaging, busbars, connectors, and thermal interfaces. SUPPLIER AND COMPETITIVE IMPLICATIONS Analog Devices and Texas Instruments are positioned most clearly around analog control, protection, telemetry, and broad system-level power management. That is attractive because 800 VDC adoption increases the value of precision sensing, isolation, hot-swap control, fault detection, and digital telemetry. The challenge is that these companies are large, diversified analog franchises, so even meaningful early AI power growth may be diluted at the consolidated revenue level. TI’s disclosure of a complete 800 VDC solution, including hot-swap, 800 V-to-6 V, and 6 V-to-<1 V conversion, indicates a credible attempt to own more of the end-to-end reference design rather than only supplying discrete control ICs. (Texas Instruments) Infineon, STMicroelectronics, onsemi, and Renesas appear to be competing from the position of broad power semiconductor platforms. Their advantage is breadth across silicon, SiC, GaN, drivers, controllers, MOSFETs, protection, and automotive- or industrial-grade reliability processes. onsemi states that its portfolio addresses high-voltage AC/DC conversion, power supply units, 800 VDC distribution, and core power delivery, using silicon and SiC technologies with monitoring and control. (onsemi) Renesas highlights GaN FETs for faster switching, lower energy losses, thermal management, and up to 98% efficiency in LLC DCX-based DC/DC converters. (Renesas Electronics) This creates a credible multi-vendor field rather than a clear 1-company semiconductor bottleneck. STMicroelectronics is notable because its public positioning aligns closely with the rails displayed in the source material. ST states that its 12 V and 6 V architectures complement an existing 800 V-to-50 V solution and that its portfolio addresses 50 V, 12 V, and 6 V power distribution inside gigawatt-scale compute infrastructure. ST also frames the 6 V path as a means to reduce conversion stages, move the bus closer to the GPU, reduce copper usage, minimize resistive losses, and improve transient performance. (ST News) That is highly aligned with the visible board set and supports the conclusion that multiple rails will remain in play through the transition. Navitas and Innoscience represent higher-beta GaN exposure. Their strategic relevance increases if the industry shifts toward direct 800 V-to-6 V or ultra-high-frequency conversion stages that strongly favor GaN switching speed, power density, and lower switching loss. Navitas explicitly positions its 800 V-to-6 V board as eliminating the traditional 48 V intermediate bus converter stage, reducing conversion losses, freeing board space, and improving end-to-end efficiency. (Navitas Semiconductor) Innoscience claims full-link GaN coverage from 800 V input to GPU terminal conversion, spanning 15 V to 1,200 V devices, and argues that high-frequency GaN can shrink magnetics and improve power density. (InnoScience) The counterbalance is that high-beta GaN names face higher execution risk, qualification risk, reliability burden, and potential margin erosion if the ecosystem standardizes around multi-sourced reference designs. Delta and Megmeet represent the system-level and power-shelf layer. This layer may capture larger dollar content per rack than individual IC sockets, but typically with different margin structure, heavier manufacturing requirements, and more integration responsibility. Delta’s public disclosures are particularly relevant: it states that its 800 VDC grid-to-chip solutions include solid-state transformer conversion from medium-voltage AC to an 800 VDC bus, HVDC/DC power distribution boards enabling 800 V-to-12 V output at up to 98.5% efficiency, and 1.1 MW in-row power delivery to bridge legacy infrastructure with forward-looking rack designs. (Delta Americas) This underscores that the investment opportunity is not confined to semiconductor vendors; power shelves, in-row power, busway, cooling, and facility electrical equipment may capture significant economics. Monolithic Power Systems is strategically visible because the display shows it across 50 V, 12 V, 6 V, and hotswap-associated designs. That breadth supports its relevance to AI power architecture, but the display also weakens any simplistic view that MPS alone controls the NVIDIA AI power transition. The read-through is positive for TAM and validation, but mixed for moat if customers can qualify several suppliers across the same voltage rails. The key financial question is not whether MPS participates, but whether it sustains differentiated efficiency, integration, reliability, and customer qualification fast enough to defend premium gross margin as the ecosystem broadens. ARCHITECTURE AND TAM IMPLICATIONS The primary TAM driver is power density per rack, not just data center square footage or server count. When rack power moves from 100 kW-class levels toward 500 kW and 1 MW, the power-delivery content per rack scales dramatically. Each rack requires protection, isolation, conversion, telemetry, connectors, busbars, liquid-cooled or airflow-managed thermal paths, and facility integration. NVIDIA’s own discussion of legacy 54 V limitations highlights space constraints, copper overload, and inefficient conversions as racks exceed 200 kW, including a reference to 1 MW rack requirements. (NVIDIA Developer) This suggests that the AI power stack could become a larger attach-rate opportunity per GPU cluster even if accelerator ASPs eventually normalize. The economic value of efficiency is nontrivial at 1 MW-class density. A 5% power-efficiency improvement at a 1 MW rack equates to 50 kW of continuous avoided power draw. Over 8,760 hours, that is 438 MWh per rack-year. At $0.10 per kWh, the avoided electricity cost is approximately $43,800 per rack-year before demand charges, cooling leverage, PUE effects, downtime benefits, and capex offsets. At $0.15 per kWh, it is approximately $65,700 per rack-year. Across 1,000 1 MW racks, the same simple power-only math is $43.8 million to $65.7 million per year. This is why modest-looking efficiency percentages can justify material capex in hyperscale AI factories. NVIDIA cites up to 5% end-to-end power-efficiency improvement and up to 30% TCO reduction from gains in efficiency, reliability, and system architecture. (NVIDIA Developer) The transition also shifts value from server-level PSUs toward rack-, row-, and facility-level power conversion. This has 2 consequences. 1st, the power supply chain becomes more strategic and may be designed into AI clusters earlier, alongside GPU, networking, and liquid cooling decisions. 2nd, brownfield adoption is likely to be uneven. Some data centers may adopt in-row AC-to-800 V conversion to support 800 V racks without immediately rebuilding the entire electrical backbone. Others may move toward deeper facility-level DC distribution over time. NVIDIA’s ecosystem note states that the transition to fully realized 800 VDC architecture will occur in phases to give the industry time to adapt and the component ecosystem to mature. (NVIDIA Developer) RISK ASSESSMENT The most important caveat is that a booth display is not the same as a high-volume qualified production socket. The source material shows demonstrator boards and supplier positioning, not final BOM awards, pricing, volume commitments, reliability data, customer-specific qualification status, or service-life test results. For investment purposes, the distinction is critical. The image supports the existence of broad design activity; it does not prove revenue timing, share allocation, or gross margin durability. Safety and reliability remain gating factors. 800 VDC fault interruption is harder than lower-voltage DC or AC systems because high-energy DC arcs do not benefit from natural AC zero crossings. The system must handle inrush current, short-circuit current, connector touch safety, hot insertion, fault containment, telemetry, service workflows, and technician training. NVIDIA has acknowledged that facility-level VDC introduces challenges in safety, standards, workforce training, capex, opex, and deployment. (NVIDIA Developer) The prominence of hot-swap boards in the display should therefore be interpreted as a sign that protection and serviceability are central to commercialization, not peripheral features. Standards risk is also material. NVIDIA is pushing 800 VDC, but broad adoption requires interoperability across voltage ranges, connectors, rack mechanics, safety practices, power shelves, facility equipment, and monitoring systems. NVIDIA specifically points to Open Compute Project participation as important for interoperability, cost reduction, voltage-range alignment, connector interfaces, and safety practices. (NVIDIA Developer) A fragmented standards environment would slow deployment, increase qualification costs, and reduce near-term volume visibility for component suppliers. There is also a topology risk. The display includes 50 V, 12 V, and 6 V because no single rail is universally optimal across all rack densities, GPU generations, cooling designs, and server form factors. 50 V protects compatibility and may dominate transitional systems. 12 V reduces stages while preserving a more familiar power domain. 6 V maximizes proximity and conversion-stage reduction but creates extreme current-delivery requirements. The coexistence of these rails is positive for broad supplier opportunity, but it complicates forecasts because a supplier’s revenue content depends heavily on which rail is adopted in which platform generation. COMPETITIVE CONCLUSION The display is structurally bullish for AI infrastructure power content and for the strategic relevance of analog, power semiconductor, power module, and rack-power suppliers. It is not a clean single-name endorsement. The supplier count and rail diversity imply that NVIDIA is creating a competitive ecosystem with deliberate redundancy. In that framework, the most advantaged suppliers will likely be those able to deliver validated high-voltage protection, high-efficiency isolated conversion, wide-bandgap devices, thermal/mechanical integration, telemetry, manufacturability, and long-life reliability at scale. The strongest near-term investment read-through is that power delivery is becoming an AI platform-enabling category with earlier design-cycle visibility than traditional commodity power. The more cautious read-through is that many of the visible boards could be engineering demonstrations rather than production awards, and that open ecosystem development may limit sustained excess returns for any 1 supplier. The best risk-adjusted exposure is likely to favor companies that can monetize multiple layers of the stack across hot-swap, controllers, GaN/SiC power stages, modules, telemetry, and system integration, rather than companies dependent on a single conversion rail or a single demonstrator board. BOTTOM LINE The source material shows a tangible acceleration of the 800 VDC AI power ecosystem. Its core message is that megawatt-class AI racks require a new power architecture, and that NVIDIA is actively organizing a broad supplier base to make that architecture production-ready. The technical direction is clear: higher voltage distribution, fewer conversion stages, lower copper intensity, more telemetry, more hot-swap intelligence, higher power density, and closer conversion to the GPU. The investment conclusion is positive for the AI power-delivery value chain as a whole, but individual stock selection should be driven by evidence of production qualification, attach rate per rack, rail-specific adoption, reliability track record, and margin defensibility rather than by display presence alone.

@aleabitoredditJun 1, 2026 · 7:27 AM

Just some mobile shower thoughts around $XFAB and train of thought: 1. 800vdc $NVDA push look for GaN/SiC players / power semis. 2. $NVTS and other fabless/fab-lite beneficiaries of $NVDA push probably use foundry models 3. care more about Western supply chains over Asia, want to build up Western capabilities + Western premiums. 4 China has a lot of capacity, maybe risk into 2028, but again it’s building up Western supply chains 5. XFAB only high volume SiC foundry in America (others like $ON or Infineon are vertically integrated) 6. advanced 6in SiC, 8in GaN on Si, building out 8in GaN 7. Maybe likely they’re developing 8in SiC from CHIPS backing, just not public material 8. check SiC revenue -> 152% Y/Y growth okay. Probably something markets missed, since blended looks worse from automotive slump, that should come out recovery 9. $NVTS and others turns out to use $XFAB. $POWI cites $XFAB in filings, among others. 10. both are $NVDA power semi explicit partners, great exposure indicator to 800vdc power semi players. 11. US Dpt. of commerce cites $XFAB as only high volume SiC foundry in the US, $50M PMT 12. validation from US Gov about critical component in supply chains is amazing 13. EU CHIPS Act gives $XFAB $128M EU, for foundry (MEMS, AI, etc), okay turns out they’re critical MEMS player 14. So that’s validation from EU gov about critical component in supply chains, dual continent subsidies 15. So now we know $XFAB is a critical MEMS foundry so you get SiC capabilities, GaN development, and MEMS upside 16. they also got $47.6M EU funding for leading Silicon Photonics supply chain in EU. So that’s EU funding on multiple angles. 17. Turns out, I know all the players there from smartphotonics from $GFS deck. 18. $NVDA and $NOK are qualifying them for silicon photonics HVM. I think this is just a government backing angle for success in EU photonics so likely to succeed… kinda like how Us gov encourages everyone to use $INTC. 19. Okay chips act 2 is coming out next week… so they’ll probably get funding there or more revenue commitments 20. 1.28 p/b, now that’s probably just book cost? Likely coming out of $SOI type legacy drag cycle. 21. Did some modeling around actually replacement values, true replacement p/b cost likely ~.5/.7. 22. Getting business for free, while having upside from SiC near term into Silicon Photonics / GaN as main growth past H2 2027. Thoughts: derisked by p/b values + replacement value. maybe like 20% downside from macro. However, critical dual continent importance. So downside risk seems low, but upside is compelling. Lot of capex likely backstopped by upcoming chips act catalyst + national security concerns. Maybe 2.5-4x rerating seems possible/likely. Not a 10-20x, but recovery from depressed valuations from silicon photonics upside with SiC / GaN bridge. TLDR: likely trading lower than replacement value, dual continent subsidies likely subsidize capex. Gov grants shows importance to Western supply chains, photonics longer term upside, SiC/GaN demand likely near term upside and bridge. Don’t control any recent volatility, should shake out anyone not really confident in the thesis though. CHIPS act 2 from EU is coming up, $XFAB was listed in earlier blueprints for optical ecosystem, so should get a boost after that comes out as near term event catalysts. So now is the risk reward seems compelling, we’ll see if this is right or not

@investmentguru_May 31, 2026 · 12:48 PM

Computex 2026 kicks off June 2nd. Theme: “AI Together.” $NVDA $AMD $INTC all expected on stage. But the real alpha isn’t on the mainstage — it’s in the supply chain sitting behind it. 👇 The AI chip war runs on optical bandwidth now. Optical Modules: $COHR $LITE $AAOI CPO Switch Chips: $AVGO $MRVL $NVDA AI Network Systems: $ANET $CSCO $CIEN $NOK Silicon Photonics foundries are the chokepoint nobody’s pricing in yet. Foundries: $GFS $TSEM $FN Advanced packaging is the quiet bottleneck of this entire cycle. Packaging Foundries: $TSM $ASX $AMKR Packaging Equipment: $AMAT $LRCX $ONTO $ASML Packaging Testing: $TER $FORM $COHU $AEHR Power delivery is the infrastructure layer everyone ignores until it breaks. Wide-Bandgap Semis: $STM $NVTS $ON Power Management: $ADI $TXN $MCHP $VICR Industrial Power: $VRT $ETN $GEV Computex isn’t just a tech show. It’s a live stress test of every link in the AI supply chain. Watch what gets announced. Watch what gets skipped. Both tell you something. Not financial advice.

@dillon_valdezMay 28, 2026 · 8:23 PM

The physical AI trade is going to tempt people into ranking robot demo videos. Wrong first filter. Start with the deployment stack: Actuators / motion control: $PH $RRX $TKR $AME $ST $ITT Sensors / vision: $CGNX $ZBRA $TDY $OUST $ON $ADI $AMBA Edge compute: $NVDA $QCOM $ARM $AMD $NXPI Simulation: $NVDA $SNPS $PTC $ADSK Factory automation / yield: $TER $ROK $EMR $HON $SYM Demos get attention. The supply chain decides who can actually deploy.

@kawzinvestsMay 28, 2026 · 3:11 PM

$MX has been sitting in my notes for a while. NVIDIA just said it directly: "As data centers transform into AI factories, the legacy 54 V standard has become a bottleneck." Their 800 VDC partner list includes $ON, $STM, $TXN, Infineon, Rohm. All multi-billion cap. All discovered. If 800V goes into a full supercycle the way the big names are guiding, the smallest pure-plays in the power semiconductor chain become high torque. Higher risk, but the math on a re-rating from 0.92x to even 2x revenue is violent to the upside. $MX is a pure-play power semiconductor IDM. Display business fully gone. $50M net cash inside a $240M market cap. CTO Hyuk Woo said it two days ago: "customers are seeking semiconductor solutions that can support higher power efficiency and power density." They are showcasing the full MV, SJ MOSFET, IGBT, and SiC portfolio at PCIM Europe in two weeks. The power discrete market for computing and data storage grows from $2.3B in 2025 to $3.0B by 2029 per Omdia. Management guiding to $300M revenue at 30% gross margin within three years. The 3-3-3 Strategy. 71 design wins last quarter up 61% year-over-year, and a $65-70M Gumi fab upgrade underway to get there.

@yasutaketinMay 27, 2026 · 10:30 AM

パワー半導体が好調・ $TXN は前日にBofAが目標株価を$320→$370に引き上げ、「AIパワー半導体のトップピック」と評価・テーマは「800Vデータセンター」へのシフト。AIサーバーの電力需要が増え、TXN（パワーアナログIC）と $ON （SiCパワー半導体）が直接の受益者という解釈

@thevalueistMay 27, 2026 · 1:16 AM

$ON ON Semiconductor: AI Data Center Growth, and Operating Recovery. Investment Thesis. ON Semiconductor is emerging from a difficult 2025 that included meaningful inventory write-downs and restructuring charges — the kind of reset that is painful in the near term but can establish a cleaner operational foundation if the underlying strategic repositioning is credible. Early indicators from recent results suggest the cyclical recovery is underway, which removes the most acute financial pressure and shifts the conversation back to the strategic pivot. The move away from commodity products toward intelligent power and sensing solutions is the right directional call. Automotive, industrial, and AI data center applications demand technically differentiated semiconductors where pricing power and customer stickiness are structurally better than commodity analog and discrete markets. The AI data center angle is particularly relevant — shifting rack architectures are increasing power density requirements in ways that expand the addressable content for specialized power management semiconductors, and ON is positioning to capture that incremental demand. The gross margin trajectory is the primary financial proof point the market is watching. A successful pivot toward higher-value applications should produce margin expansion that validates the mix shift narrative, and leadership in the core power solutions business needs to demonstrate that the restructuring has produced a more efficient cost structure alongside the repositioned product portfolio. Both of those signals need to appear together to sustain the current valuation. The valuation is the constraint on the upside case. The stock has re-rated on recovery momentum and AI infrastructure optionality, and the resulting premium leaves limited tolerance for execution missteps or demand cycle softness. Intense global competition — particularly from Asian power semiconductor suppliers — adds pricing pressure that makes margin expansion harder to achieve and sustain than the product roadmap alone implies. Leadership transition within the core power business introduces execution uncertainty at a moment when the company needs consistent operational delivery to validate the bull case. The strategic direction is coherent and the end markets are favorable, but the combination of premium valuation, competitive intensity, and mid-transition leadership creates a setup where the margin for error is narrow and the burden of proof sits squarely with management.

@benitozMay 26, 2026 · 1:56 AM

Power Is Everything BofA’s Vivek Arya just modeled the AI power semi market, and the cleanest read is the power split The 600kW+ rack pool is worth $0 today The megawatt rack does not exist yet Then 800V DC arrives CY26 $1.4bn CY27 $11bn, already the majority CY30 $16.1bn Zero to sixteen billion in five years, off a market that was not on a sellside model two years ago Analog ICs stay biggest, but SiC and GaN grow fastest at 63% and 69% The greenfield inverts $txn $adi $wolf $mpwr $on $stm $MCHP

@thevalueistMay 17, 2026 · 11:15 PM

$STM $WOLF $NVTS $ON GaN and SiC: The System-Architecture Race in AI Power The 650V power semiconductor market is no longer a straightforward comparison between GaN and SiC — the technical differentiation between the two is well understood, and the competitive conversation has moved up the stack toward system-level architecture and packaging innovation. That shift matters for how the market gets evaluated and which companies are positioned to lead it. The technical division of labor is relatively clear. SiC handles high-current, thermally demanding environments where raw robustness and thermal conductivity are the primary requirements. GaN wins on efficiency and switching frequency in applications where power density and compact form factor are the design constraints. Neither technology is displacing the other — the application landscape is broad enough to support both, and the more interesting question is which suppliers can serve both convincingly. Packaging has emerged as a primary differentiator. Top-side cooling and other advanced thermal management configurations are no longer incremental improvements — they are enabling architectures that allow power modules to perform at levels that component specs alone don't predict. Suppliers that control packaging design alongside semiconductor development have a meaningful advantage over those selling discrete components into customer-designed systems. Infineon and Navitas represent the two most visible expressions of the integrated platform strategy. Both are moving toward bundled solutions — combining switching devices, gate drivers, and thermal management into cohesive power architectures targeted at specific high-demand verticals. AI data centers and electric vehicle infrastructure are the primary pull markets, and both require power delivery solutions that optimize for efficiency, density, and thermal performance simultaneously. The broader market shift — from component rankings to integrated solutions — has direct implications for competitive moats. A supplier that owns the system architecture conversation with a hyperscaler or EV platform is in a structurally different position than one competing on device-level specifications. That transition rewards engineering depth, application knowledge, and customer intimacy over pure process technology leadership, and it is reshaping which players matter most in the 650V segment going forward.

@thevalueistMay 16, 2026 · 9:57 PM

$STM $WOLF $NVTS $ON EXECUTIVE OVERVIEW The source table is a useful high-level competitive map of 650V-class GaN and SiC discretes, but it should not be treated as a clean device-ranking table. The central conclusion is that the market is not converging around a single superior device family. It is segmenting by power architecture, switching topology, thermal path, packaging, qualification status, and customer-specific reference design adoption. At 650V and 400V operating assumptions, SiC retains a measurable conduction-loss and ruggedness advantage in high-current, lower-frequency, thermally constrained stages, while GaN retains the structural advantage in high-frequency, low-output-charge, low-reverse-recovery designs where magnetics reduction, power density, and switching-loss minimization dominate. The investable implication is that device-level Rds_on is necessary but insufficient; the durable competitive advantages will accrue to vendors that can deliver full system-level power conversion platforms with qualified packages, credible thermal paths, drivers or control ICs, reference designs, field reliability data, and supply assurance. The table’s most important message is not that GaN is “better” than SiC or vice versa. The most important message is that 650V-class power semiconductors are moving from a device-specification competition into a system-architecture competition. AI server power, telecom power, PV, EV charging, UPS, and BESS applications are all pulling wide-bandgap devices into higher-volume use cases, but the winning socket depends on whether the customer is optimizing for a 400V bus, 48V/54V rack power, 800V HVDC distribution, totem-pole PFC, LLC, matrix conversion, or isolated bus conversion. NVIDIA’s 800 VDC architecture is especially important because it shifts the debate away from a pure 650V discrete comparison and toward higher-voltage, fewer-stage, system-level power conversion. NVIDIA states that 800 VDC reduces conversion stages, current, copper, cable bulk, and data center distribution losses versus 54 VDC rack-level systems and 480 VAC facility-level systems, and lists many of the table’s vendors among its ecosystem partners. SOURCE MATERIAL AND DATA QUALITY The table normalizes around 650V-class SiC and GaN devices, with values stated at 80C and Coss/Eoss/Qoss-style metrics assumed at Vds = 400V. That is a reasonable first-order benchmark for 400V DC-link server PSU and PFC contexts, but it creates several comparability problems. First, the table mixes 650V and 700V devices. Second, it mixes discrete FETs, integrated-driver GaN devices, cascode GaN, e-mode GaN, SiC MOSFETs, and highly integrated offline power ICs. Third, it mixes TOLT, TOLL, TO-247, TO-263, BHDFN, QFN, and other package formats. Fourth, several cells are missing, marked with “?”, or subjectively annotated as “wrong package,” “in development,” “no charts,” or “website confusing.” Fifth, power dissipation is especially difficult to compare because datasheet power dissipation depends heavily on whether the measurement assumes case, ambient, board, top-side cooling, bottom-side cooling, thermal pad, cold plate, or package-only limits. The table is therefore most useful as a screening framework, not as a procurement-grade ranking. The “wrong package” notation is best interpreted as a package-normalization critique rather than a technology critique. A TOLL or TO-247 device is not wrong in an absolute sense; it is wrong only if the benchmark objective is a top-side-cooled, low-inductance, high-power-density device suitable for compact AI server PSU mechanics. TO-247 remains relevant in industrial, EV charging, lab, and lower-density applications. TOLL is highly relevant for bottom-side-cooled SMD designs. TOLT is strategically important where top-side heat extraction to a cold plate, airflow channel, or lid is desired while reducing PCB thermal stress. The table implicitly favors top-side-cooled high-density architectures, which is directionally aligned with AI power density trends, but that bias should be recognized. TECHNOLOGY INTERPRETATION The core device trade-off is clear. The SiC rows generally show lower Rds_on at comparable voltage class and higher apparent thermal current capability. The best SiC entries in the table sit around 13mΩ to 21mΩ, while most GaN entries sit around 25mΩ to 42mΩ. Since conduction loss scales with I²R, a 42mΩ device has 68% higher conduction loss than a 25mΩ device at the same current before thermal and temperature-coefficient effects are considered. At 50A, a 25mΩ device dissipates 62.5W from conduction alone, while a 42mΩ device dissipates 105W. This difference matters in high-current PFC legs, hard-worked primary switches, and applications where thermal headroom is the binding constraint. GaN’s advantage is in the dynamic loss domain. The GaN devices in the table typically show materially lower capacitance and stored-energy figures than many SiC alternatives, with lower Eoss and Qoss values for several GaN entries. This is critical for high-frequency switching and resonant or quasi-resonant topologies because the system-level benefit is not only lower transistor loss; it is also smaller magnetics, smaller capacitors, lower mechanical volume, and potentially fewer conversion stages. Zero reverse-recovery charge is a key GaN benefit in totem-pole PFC and high-frequency half-bridge designs. Infineon’s 650V CoolGaN page highlights ultrafast switching, no reverse-recovery charge, low output charge, low gate charge, top-side cooling, and applications including data center power, telecom AC-DC conversion, EV charging, PV, and industrial power supplies. The practical conclusion is that SiC is favored when conduction, thermal robustness, avalanche behavior, high voltage, and rugged field use dominate, while GaN is favored when switching frequency, power density, reverse-recovery elimination, and passive-component shrinkage dominate. In server PSUs, both can win different stages. Infineon explicitly frames single-phase and three-phase server PSUs as hybrid Si, SiC, and GaN systems, with SiC and Si commonly suited to single-phase PFC, SiC and GaN suited to three-phase PFC, and SiC or GaN suited to DC-DC LLC stages. Infineon also describes AI rack power moving from roughly 100kW toward 1MW+ per rack and references benchmark PSU efficiency near 98%. INFINEON Infineon appears to have one of the strongest combined positions in the source table because it has credible 650V-class offerings on both sides of the SiC/GaN divide. The IGLT65R025D2 row shows a TOLT GaN device with 650V rating, 35mΩ Rds_on at the table’s 80C condition, 105pF Coss, 800pF Ciss, 12µJ Eoss, and 82nC Qoss. The IMLT65R015M2H row shows a TOLT SiC device with 17.5mΩ Rds_on, 200pF Coss, 3000pF Ciss, 20µJ Eoss, and 150nC Qoss. In simple terms, Infineon’s SiC entry looks materially stronger on conduction and thermal capability, while its GaN entry looks materially stronger on stored energy and input capacitance. That is exactly the kind of dual-platform optionality that matters when customer architectures remain fluid. Infineon’s strategic advantage is not merely the device pair. It is the combination of CoolGaN, CoolSiC, drivers, controllers, reference designs, application engineering, and data center power positioning. The company’s 650V SiC product page identifies CoolSiC discretes for server SMPS, ESS, solar inverters, EV charging, UPS, and industrial SMPS, while its data-center page explicitly positions Infineon from grid to core across Si, SiC, GaN switches, gate drivers, power stages, sensors, controllers, and MCUs. The investment implication is that Infineon is better positioned as a broad platform beneficiary than as a single-device winner. The trade-off is that AI power upside is diluted across a large diversified semiconductor base, and device-level leadership in any one row does not automatically translate into disproportionate equity upside. NAVITAS Navitas is one of the highest-beta pure-play exposures in the table because it has both GaN and SiC entries and is highly aligned with AI data center power narratives. The NV6524 row shows a 650V TOLT GaN device with integrated driver, 25mΩ Rds_on, 240W max power dissipation in the table, 150pF Coss, 16µJ Eoss, and 125nC Qoss. That combination is attractive because 25mΩ is among the lower GaN Rds_on values in the table, while integrated drive and protection can reduce adoption friction. Navitas’ own NV6524 datasheet describes a 650V continuous / 800V transient GaNSafe top-cooled TOLT device, 25mΩ max Rds_on at 25C, 90A continuous current, zero reverse-recovery charge, dV/dt programmability, operation up to 2MHz, short-circuit protection with 350ns latency, and 100V/ns dV/dt immunity. The source table’s Navitas SiC entry is flagged as “wrong package,” which reduces its comparability to top-side-cooled GaN devices, but the strategic point is that Navitas is attempting to bundle GaN and SiC into AI power reference platforms. Navitas has promoted 4.5kW and 8.5kW AI data-center power reference designs using GaNSafe and Gen-3 Fast SiC, claiming over 97% efficiency and 137W/in³ for the 4.5kW design, and approximately 98% efficiency for an 8.5kW OCP/ORv3-oriented solution. The key investment question is execution rather than technology concept. A pure-play GaN/SiC company can have substantial upside if AI power designs convert into production revenue, but it also carries higher customer-concentration, qualification-timing, balance-sheet, and valuation risk than diversified analog and power incumbents. RENESAS Renesas is strategically important because the Transphorm acquisition gave it a credible high-voltage GaN platform with a silicon-compatible cascode architecture. The source table lists TP65H030G4PRS as a TOLT GaN device with 650V rating, 42mΩ Rds_on at the table condition, 140pF Coss, 1800pF Ciss, 15µJ Eoss, and 135nC Qoss. Official product information states that TP65H030G4PRS is an active 650V, 30mΩ SuperGaN FET in TOLT, with 41mΩ max Rds_on, 135nC Qoss, 127pF Coss, 1500pF Ciss, standard gate-drive compatibility, dynamic Rds_on production testing, and applications including AI datacenter and telecom power supplies, e-mobility charging, PV inverter, UPS, and BESS. Renesas’ differentiation is ease of adoption and field experience. The company describes its Gen IV Plus GaN FETs as available in TOLT, TO-247, and TOLL, aimed at AI data centers, server power systems, 800V HVDC architecture, e-mobility charging, UPS, BESS, and solar inverters. It also states that the platform uses a d-mode normally-off architecture with a low-voltage silicon MOSFET input stage, standard off-the-shelf gate driver compatibility, more than 20M GaN devices shipped, and more than 300B field hours. The caveat is that Renesas does not screen as a full SiC/GaN dual leader in this table. Its strength is GaN plus analog/control/system integration, not broad 650V SiC parity with Infineon or ST. STMICROELECTRONICS ST has a credible SiC position and an emerging GaN position, but the timing of the GaN product matters. The source table lists SGT023R70FTP as a 700V TOLT GaN device with a tentative 30mΩ Rds_on, 200W to 250W power dissipation, 233pF Coss, 218pF Ciss, unknown Eoss, and 190nC Qoss, with the comment “In development.” ST’s product page confirms that SGT023R70FTP is a 700V, 18mΩ typical e-mode PowerGaN transistor in preview/design stage, with no distributor availability reported in the page view. This is an important correction to the table: ST’s GaN entry may be technically interesting, but it should not be weighted equally with fully available production parts. ST’s 650V SiC entry is much more mature. The table lists SCT014TO65G3 as a TOLL SiC device with 14mΩ Rds_on, 400W power dissipation, 250pF Coss, and 3000pF Ciss. ST’s official page describes SCT014TO65G3 as an active, volume-production 650V, 13.5mΩ typical, 110A SiC MOSFET in a TO-LL package, developed using 3rd-generation SiC technology, with low Rds_on across temperature, low capacitances, high-speed switching, and a source-sensing pin. The conclusion is that ST is a stronger current SiC incumbent than a current 650V GaN production leader in this specific table, although its GaN roadmap remains strategically relevant. ONSEMI Onsemi’s table position is strong in SiC and optional in GaN. The source table lists NVBG015N065SC1 as a 650V SiC device with 13mΩ Rds_on, 250W power dissipation, 400pF Coss, and 4000pF Ciss, but flags the package as wrong. Official onsemi data describes NVBG015N065SC1 as a 650V SiC MOSFET in D2PAK-7L with 12mΩ typical Rds_on at 18V gate drive and 15mΩ typical at 15V, low effective Coss, 100% avalanche testing, and AEC-Q101 qualification. This is a credible rugged SiC part, but it is not a clean TOLT benchmark device. The more strategically interesting issue is Onsemi’s vertical GaN roadmap. The table characterizes vertical GaN as potentially “amazing if it works,” but currently “hopes and dreams.” That is directionally fair as a production-screen comment, but it should be updated for 2025-2026 developments. Onsemi announced vertical GaN built on GaN-on-GaN technology, claimed almost 50% lower losses, cited more than 130 patents, and stated that it is sampling 700V and 1200V devices to early access customers. Separately, onsemi announced a collaboration with GlobalFoundries to develop high-performance 650V lateral GaN-on-silicon solutions for AI data centers, automotive, aerospace, and other markets. Onsemi therefore has credible optionality, but the investment case remains roadmap-heavy relative to Infineon, Renesas, Navitas, and existing production GaN vendors. WOLFSPEED Wolfspeed is a SiC specialist in this framework. The table correctly notes no GaN offering and lists C4MV015065T as a 650V TOLT SiC device with 17mΩ Rds_on, 125W power dissipation, 200pF Coss, 5000pF Ciss, and 28µJ Eoss. Official Wolfspeed product information identifies C4MV015065T as a 650V, 15mΩ, 150A, 175C, industrial-qualified Gen 4 SiC MOSFET in a TOLT top-side-cooled package. The technology conclusion is that Wolfspeed’s device should be taken seriously where SiC ruggedness, top-side cooling, and high-current capability are priorities. The portfolio conclusion is more limiting: no GaN means Wolfspeed is less advantaged in system architectures where GaN wins the high-frequency switching socket. Wolfspeed is therefore more exposed to whether customers choose SiC-heavy or hybrid SiC/GaN architectures, rather than to a pure GaN inflection.

@jasonl_capitalMay 15, 2026 · 12:06 PM

2. $ON - ON Semiconductor The power and sensing layer. Q1 revenue $1.51B. AI data center revenue grew over 30% sequentially, nearly double their own forecast. Silicon carbide chips now in 55% of new EV models showcased at the 2026 Beijing Auto Show. Builds inductive position sensors designed for robotics and motor control applications with accuracy down to 50 arcseconds. Named Top Intelligent Sensing Solutions provider in 2026. As robots scale, ON supplies the power management and precision sensing in every joint.

@stocksavvyshayMay 11, 2026 · 12:59 PM

THE MOST PROFITABLE AI SEMICONDUCTOR STOCKS Operating margin breakdown: • Best-in-class (50%+) | $NVDA, $TSM • Elite (40–49%) | $MU, $ANET, $KLAC, $AVGO, $SNDK • Strong (30–39%) | $ASML, $LRCX, $WDC, $CRDO • Solid (15–29%) | $CDNS, $AMAT, $ALAB, $ARM, $MRVL • Low margin (Below 15%) | $AMD, $COHR, $LITE, $ON

@investmentguru_May 11, 2026 · 10:27 AM

$MU $AMD $INTC $P $MRAM $MXL $CEVA $PENG $HIMX $ON $GFS $GLW $NOK Some of the better-looking setups in this market right now. Semiconductor, connectivity, memory, optical, and AI infrastructure names continue showing relative strength while many sectors are chopping sideways. A lot of these charts are either breaking out or setting up near key levels with momentum still favoring the sector rotation theme.

@stocksavvyshayMay 10, 2026 · 2:25 PM

SEMICONDUCTOR STOCKS BY PEG RATIO PEG < 1 usually means mispriced growth PEG > 2 starts to push into the danger zone Here’s how they stack up: • $INTC ~2.8x • $LRCX ~2.0x • $KLAC ~2.0x • $AMAT ~2.0x • $ASML ~1.7x • $ALAB ~1.6x • $ARM ~1.5x • $ANET ~1.5x • $LITE ~1.3x • $TSM ~1.1x • $CRDO ~1.0x • $NVDA ~1.0x • $COHR ~0.9x • $AVGO ~0.9x • $AMD ~0.7x • $SNDK ~0.7x • $MRVL ~0.7x • $AAOI ~0.6x • $ON ~0.5x • $MU ~0.4x

@stocksavvyshayMay 9, 2026 · 3:15 PM

10 WAYS ROBOTICS IS GETTING BUILT OUT ACROSS SECTORS 1. $NVDA infrastructure layer for robotics stack where humanoid robots from Optimus to Atlas can train in Nvidia’s Isaac Sim virtual environment before ever taking a real step 2. $PLTR & $ORCL turn robot fleet sensor data into operational intelligence while $PANW & $CRWD secure robot nervous system as fleets scale & attack surface grows 3. $GOOGL, $MSFT, $META & $BIDU provide foundation models that give robots ability to reason, see & act 4. $ARM, $SNPS & $CDNS design chips that power robot brains while $TSM manufactures silicon & $INTC contributes both design & fabrication capacity for edge compute 5. $AMZN, $AAPL, $XPEV & $BABA are building competing robotics ecosystems across consumer, logistics & automation applications 6. $HON & $ROK provide industrial automation & control systems that integrate robots into existing factory infrastructure at scale 7. $MP supplies the rare-earth magnets that power motors & actuators throughout the robot supply chain 8. $QCOM Dragonwing chips handle 5G connectivity & on-device AI for robot coordination while $MBLY & $AMBA provide vision & compute silicon enabling real-time perception 9. $ADI, $TXN, $ON, $STM & $OSS sit closer to physical edge of robotics from analog chips that convert sensor signals, manage power & control motors to rugged AI compute systems that process data in real time 10. $TSLA only company attempting humanoid robots at manufacturing scale with first-generation Optimus production lines being installed at Fremont right now designed for 1M robots/year & Gigafactory Texas being built out for 10M robots/year at a $20-30K target price

@techfund1May 5, 2026 · 11:50 AM

"Power semi content will 10x with the move to 800V racks. Lots of power semi content outside the rack with solid state transformers" - ON CEO We did the last review of this space in Feb, link below. Will update in the coming weeks as the outlook continues to get better $ON $IFX $WOLF $MPWR

@thevalueistMay 4, 2026 · 10:54 PM

$ON KEY READ-THROUGHS FROM ON SEMICONDUCTOR Q1 2026 EARNINGS CALL ON Semiconductor’s Q1 2026 call provides a high-quality cross-sector signal that the analog/power semiconductor cycle has likely bottomed, but the recovery is uneven and increasingly concentrated in AI data center power, China EV power electronics, energy storage, and select industrial end markets. The most important market implication is that the AI infrastructure bottleneck is migrating deeper into power conversion, rack-level electrical architecture, backup power, and grid interface, creating durable content expansion for power semiconductors and data center electrical infrastructure suppliers. Automotive read-throughs are more bifurcated: China EV content growth remains strong despite weak passenger vehicle volumes, 900V platforms are gaining traction, and zonal architecture is moving into production, while Europe remains structurally weaker and cost-optimized EV platforms are still relying on IGBTs, limiting the purity of the silicon carbide TAM expansion thesis. The call is also constructive for broad analog, industrial distribution, and power pricing, but negative for near-term mature-node semiconductor equipment capex because ON Semiconductor is recovering through utilization and prior capacity investments rather than new wafer-fab spending. AI DATA CENTER POWER AND ELECTRICAL INFRASTRUCTURE INFLECTING FROM DESIGN PIPELINE TO REVENUE (READ-THROUGH 1) Affected companies: Vertiv Holdings (VRT: USA), Eaton (ETN: USA), Schneider Electric (SU: France), ABB (ABBN: Switzerland), Delta Electronics (2308: Taiwan), Lite-On Technology (2301: Taiwan), Flex (FLEX: USA). Directional impact and magnitude: Positive, high for Vertiv, Eaton, Schneider Electric, Delta Electronics, and Flex; positive, medium for ABB and Lite-On. Near-term trading catalyst and longer-duration fundamental shift. Supporting call evidence: ON Semiconductor stated that AI data center revenue grew more than 30% quarter-over-quarter, nearly double its expected growth rate entering the quarter, and that 2026 AI data center revenue is now expected to double year-over-year. Management also stated that ON is engaged “with all major power supply vendors, serving every major AI hyperscaler,” and specifically highlighted Flex Power, where the partnership spans “more than 30 active programs across intermediate bus converters, power supplies, battery backup, supercapacitors, and next-generation 800-volt DC architectures.” Transmission mechanism: The call confirms that AI data center power demand is not merely a future design-win story; it is already converting into revenue. This is directly positive for suppliers exposed to rack power, power shelves, intermediate bus converters, UPS, battery backup, switchgear, thermal/electrical infrastructure, and 800V DC architectures. Vertiv, Eaton, Schneider Electric, Delta Electronics, and Flex benefit as AI server power density forces hyperscalers to redesign power delivery from facility-level distribution to rack-level conversion. The read-through is especially actionable for Flex because ON cited Flex Power by name and described more than 30 active programs, indicating that Flex has direct participation across multiple AI power architecture nodes. The broader implication is that AI infrastructure spend is expanding from GPUs and networking into power infrastructure, which supports sustained revenue growth and margin mix for data center electrical suppliers. HIGH-VOLTAGE RACK ARCHITECTURES EXPAND POWER CONTENT BUT INCREASE HYPERSCALER CAPEX INTENSITY (READ-THROUGH 2) Affected companies: Microsoft (MSFT: USA), Alphabet (GOOGL: USA), Amazon (AMZN: USA), Meta Platforms (META: USA), Oracle (ORCL: USA), Vertiv Holdings (VRT: USA), Eaton (ETN: USA), Schneider Electric (SU: France). Directional impact and magnitude: Positive, high for data center power infrastructure suppliers; negative, small to medium for hyperscaler free cash flow and capex intensity in the near term; longer-duration impact is mixed because higher power capex may enable larger AI cluster deployment and better energy efficiency. Supporting call evidence: Management stated that a current 120 kW REC represents approximately $9,500 of content, while an 800V or high-voltage REC represents approximately $115,000 of content. Management added: “Although our content is almost 10x inside the REC, there is additional incremental content from the REC all the way to the infrastructure that we also participate in.” Transmission mechanism: The content delta between conventional rack power and high-voltage rack architectures implies a step-function increase in electrical and power semiconductor content per AI rack. This is a direct positive for electrical infrastructure vendors and power semiconductor suppliers, but it also indicates that hyperscaler AI capex is becoming more power-intensive. Microsoft, Alphabet, Amazon, Meta, and Oracle may face higher non-GPU infrastructure cost per deployed AI compute unit, including power conversion, backup, thermal, and grid interconnection. The fundamental offset is that these investments are required to overcome power-density limits and improve system efficiency. The read-through is therefore negative for near-term capex intensity and free cash flow optics, but potentially positive for longer-duration AI capacity scaling. AI POINT-OF-LOAD AND BOARD-LEVEL POWER SEMIS SEE TAM EXPANSION, BUT ON’S ENTRY RAISES COMPETITIVE PRESSURE (READ-THROUGH 3) Affected companies: Monolithic Power Systems (MPWR: USA), Vicor (VICR: USA), Power Integrations (POWI: USA), Texas Instruments (TXN: USA), Analog Devices (ADI: USA), Infineon Technologies (IFX: Germany). Directional impact and magnitude: Positive, medium near term for Monolithic Power Systems and Vicor due to category validation; positive, small to medium for Texas Instruments, Analog Devices, Power Integrations, and Infineon. Longer-duration competitive impact is mixed to negative, small to medium, for incumbents if ON Semiconductor converts AI data center breadth into share gains. Supporting call evidence: Management stated that AI data center growth came from “broader adoption across the power tree with multiple XPU vendors and all the leading hyperscalers.” In Q&A, management described content “across the XPU, so whether it’s GPU or CPU, the power delivery right at the GPU in whatever form that is required, whether it’s an SPS or anything else,” and also referenced Aura Semiconductor’s Vcore acquisition as part of the AI data center power platform. Transmission mechanism: The call validates a broader AI power semiconductor TAM spanning smart power stages, multiphase controllers, voltage regulators, intermediate bus conversion, high-voltage FETs, silicon carbide, and JFET-based solutions. This is positive for Monolithic Power Systems and Vicor because it confirms that the power subsystem is becoming a larger value pool within AI compute platforms. However, ON’s strategy is explicitly to compete across the full power tree, including board-level Vcore and GPU/CPU power delivery. That creates a medium-term competitive risk for specialized AI power incumbents if hyperscalers and XPU vendors prefer a broader supplier with high-voltage, low-voltage, and system-level power capabilities under one portfolio. ENERGY STORAGE AND MICROGRIDS ARE BEING PULLED FORWARD BY AI POWER BOTTLENECKS (READ-THROUGH 4) Affected companies: Fluence Energy (FLNC: USA), Tesla (TSLA: USA), Sungrow Power Supply (300274: China), Sineng Electric (300827: China), Schneider Electric (SU: France), Eaton (ETN: USA), Vertiv Holdings (VRT: USA), SolarEdge Technologies (SEDG: USA), Enphase Energy (ENPH: USA), SMA Solar Technology (S92: Germany). Directional impact and magnitude: Positive, high for Sineng Electric given direct mention; positive, medium to high for Fluence and Sungrow; positive, medium for Tesla Energy, Schneider Electric, Eaton, and Vertiv; positive, small to medium for SolarEdge, Enphase, and SMA Solar. Near-term trading catalyst and longer-duration fundamental shift. Supporting call evidence: Management stated that the “AI halo effect continues to drive incremental demand in adjacent infrastructure markets, particularly energy storage systems,” and that rising energy costs and declining battery prices are accelerating project economics. ON now expects to outpace power semiconductor growth in this market in 2026, with “more than 40% revenue growth year-over-year and a market share approaching 60%,” and is ramping revenue for “a large US OEM’s microgrid deployment.” Management also highlighted Sineng Electric’s use of ON hybrid power integrated modules for utility-scale solar inverters and liquid-cooled energy storage platforms. Transmission mechanism: AI data centers are increasing the value of behind-the-meter and grid-adjacent energy storage, microgrids, and high-efficiency inverter platforms. This is positive for BESS integrators and inverter suppliers because data center power constraints and energy-price volatility improve the economic case for storage deployments. The direct Sineng relationship is particularly significant because it signals active adoption of high-efficiency SiC/IGBT hybrid modules in liquid-cooled ESS and utility-scale solar. For Fluence and Tesla Energy, the read-through is category-positive rather than directly customer-specific: accelerating microgrid and ESS deployment expands system demand, inverter content, battery integration, and power conversion demand. For Schneider, Eaton, and Vertiv, the same trend supports broader electrical infrastructure attachment around AI campuses and microgrids. CHINA EV CONTENT GROWTH IS OUTPERFORMING UNIT DEMAND AND SUPPORTS CHINESE OEM EXPORT COMPETITIVENESS (READ-THROUGH 5) Affected companies: BYD Company (1211: Hong Kong), Geely Automobile Holdings (175: Hong Kong), NIO (NIO: USA), XPeng (XPEV: USA), Li Auto (LI: USA), Volkswagen (VOW3: Germany), BMW (BMW: Germany), Mercedes-Benz Group (MBG: Germany), Stellantis (STLAM: Italy). Directional impact and magnitude: Positive, medium to high for BYD, Geely, NIO, XPeng, and Li Auto; negative, small to medium for European legacy OEMs due to relative competitive pressure and slower regional recovery. Near-term trading catalyst for China EV sentiment and longer-duration fundamental shift toward 900V/high-efficiency architectures. Supporting call evidence: Management stated that China automotive revenue grew year-over-year in Q1 despite a 6% decline in China passenger vehicle market volumes. Management also said that 900V EV architectures are being “led by Chinese OEMs,” that ON is already in production at customers’ next-generation EV platforms enabling flash charging and higher efficiency, and that expanded collaborations with Geely and NIO highlight ON’s role in enabling customers to scale globally with next-generation 900V platforms. Transmission mechanism: Semiconductor content growth in China EV platforms is outpacing vehicle unit growth, indicating that Chinese OEMs are adding higher-value power content per vehicle through 900V architectures, silicon carbide, advanced traction inverters, and higher-efficiency systems. This supports the competitiveness of Chinese EV exporters by improving fast-charging capability, drive range, and energy efficiency. The relative negative read-through for European OEMs is that China appears to be leading the high-voltage EV architecture transition while European automotive demand remains weak. The call reinforces the view that the next leg of EV differentiation is shifting from battery capacity alone to power electronics efficiency, charging speed, and system-level cost optimization. ON’S 55% SIC SHARE IN NEW BEIJING EV MODELS IS A NEGATIVE SHARE SIGNAL FOR COMPETING SIC DEVICE VENDORS (READ-THROUGH 6) Affected companies: STMicroelectronics (STMPA: France), Infineon Technologies (IFX: Germany), ROHM (6963: Japan), Wolfspeed (WOLF: USA), Coherent (COHR: USA), Mitsubishi Electric (6503: Japan). Directional impact and magnitude: Negative, high for Wolfspeed due to greater SiC concentration; negative, medium for ROHM and STMicroelectronics; negative, small to medium for Infineon and Mitsubishi Electric due to broader diversification; mixed for Coherent because higher SiC adoption is positive for substrate demand but ON share gain may limit device-level pull-through from competing ecosystems. Longer-duration fundamental shift, with near-term trading relevance for SiC-exposed equities. Supporting call evidence: Management stated: “Our silicon carbide share of new EV models deployed at the 2026 Beijing Auto Show in April is approximately 55%.” Management also said that ON is the preferred power solution for next-generation 900V EV platforms and highlighted expanded collaborations with Geely and NIO. Transmission mechanism: New model launches typically define semiconductor suppliers for a multi-year production cycle. A 55% share claim across new Beijing Auto Show EV models implies that ON may be capturing a disproportionate share of China’s 900V SiC design pipeline. This is a negative competitive signal for SiC device suppliers that need China EV traction to support utilization, pricing, and growth expectations. The read-through is most negative for SiC-pure or SiC-heavy exposures because the China EV market is one of the largest near-term volume opportunities for SiC traction inverters. For diversified power semi suppliers such as Infineon and STMicroelectronics, the magnitude is lower because they also participate in IGBT, MOSFET, MCU, and broader auto content, but the share signal is still adverse. IGBT RESILIENCE TEMPERING THE PURE SILICON CARBIDE TAM EXPANSION THESIS (READ-THROUGH 7) Affected companies: Wolfspeed (WOLF: USA), Coherent (COHR: USA), Infineon Technologies (IFX: Germany), Mitsubishi Electric (6503: Japan), Fuji Electric (6504: Japan), Renesas Electronics (6723: Japan), STMicroelectronics (STMPA: France), ROHM (6963: Japan). Directional impact and magnitude: Negative, medium for Wolfspeed and small to medium for Coherent due to lower implied SiC content per cost-optimized EV; positive, small to medium for Infineon, Mitsubishi Electric, Fuji Electric, and Renesas given IGBT exposure; mixed for STMicroelectronics and ROHM. Longer-duration fundamental shift with near-term relevance to SiC TAM assumptions. Supporting call evidence: Management stated: “With cost-optimized EV platforms driving increased adoption of IGBT-based traction inverter solutions, our latest generation IGBTs deliver a compelling balance of performance, efficiency, and cost, complementing our silicon carbide wins, particularly in front axle applications.” ON also disclosed a new IGBT-based traction inverter program with a North American OEM transitioning to direct semiconductor sourcing. Transmission mechanism: The call directly challenges a linear SiC penetration assumption across all EV traction applications. Cost-optimized platforms are still using IGBTs where performance and cost tradeoffs are favorable, particularly in front axle or secondary-drive applications. This reduces SiC dollar content per EV versus bullish assumptions that all next-generation EV inverters migrate rapidly to SiC. The read-through is positive for diversified power semiconductor companies with IGBT franchises and negative for companies whose valuation depends on aggressive SiC content expansion. It also implies that OEMs will increasingly optimize traction inverter architectures by axle, voltage class, and vehicle segment rather than adopting SiC uniformly. ZONAL ARCHITECTURE IS ENTERING PRODUCTION AND CREATING MULTI-CHIP AUTOMOTIVE CONTENT UPLIFT (READ-THROUGH 8) Affected companies: NXP Semiconductors (NXPI: USA), Microchip Technology (MCHP: USA), Texas Instruments (TXN: USA), Analog Devices (ADI: USA), Marvell Technology (MRVL: USA), Aptiv (APTV: USA), TE Connectivity (TEL: USA). Directional impact and magnitude: Positive, medium for NXP and Microchip due to automotive networking exposure; positive, small to medium for Texas Instruments, Analog Devices, Aptiv, and TE Connectivity; positive, small for Marvell. Longer-duration fundamental shift, with near-term validation from production shipments. Supporting call evidence: ON stated that it began production shipments of Treo-based 10BASE-T1S Ethernet solutions for a leading North American customer’s next-generation zonal architecture. Management said the platform integrates “more than 30 Treo devices, enabling in-zone connectivity,” and connected the design wins to the transition toward software-defined vehicles and centralized compute models. Transmission mechanism: Zonal architecture replaces distributed ECU complexity with local zones, centralized compute, Ethernet connectivity, and more intelligent power distribution. This creates incremental semiconductor content in 10BASE-T1S PHYs, switches, smart FETs, power management, sensing, and connectivity. NXP and Microchip are positively exposed to automotive Ethernet and in-vehicle networking demand, while Texas Instruments and Analog Devices benefit from smart power and mixed-signal content. Aptiv and TE Connectivity benefit from architecture-level redesign around zonal controllers, power distribution, connectors, and harness optimization. The competitive nuance is that ON’s own Treo ramp creates socket-level pressure in some smart power and connectivity functions, so the category read-through is positive while individual design-win share remains contested. EUROPEAN AUTOMOTIVE REMAINS THE WEAKEST REGIONAL LINK IN THE RECOVERY STACK (READ-THROUGH 9) Affected companies: Infineon Technologies (IFX: Germany), STMicroelectronics (STMPA: France), Melexis (MELE: Belgium), Continental (CON: Germany), Valeo (FR: France), Forvia (FRVIA: France), Volkswagen (VOW3: Germany), BMW (BMW: Germany), Mercedes-Benz Group (MBG: Germany), Stellantis (STLAM: Italy). Directional impact and magnitude: Negative, medium for European auto suppliers and OEMs; negative, small to medium for European auto semiconductor suppliers. Near-term trading catalyst and medium-duration fundamental concern. Supporting call evidence: Management ranked automotive regional strength as China first, North America second, and Europe last. ON stated: “The automotive market has not really recovered, so you can think about it as going sideways,” specifically in reference to Europe, and said this matches what OEMs have been reporting. Transmission mechanism: European automotive weakness delays semiconductor replenishment, slows content growth conversion, and reduces operating leverage for suppliers with high European OEM exposure. Infineon, STMicroelectronics, and Melexis face weaker near-term auto demand signals in Europe, while Continental, Valeo, and Forvia remain exposed to sluggish OEM production and delayed platform ramps. For European OEMs, the read-through is competitively negative because China OEMs are advancing 900V architectures and export growth while Europe remains in a sideways demand environment. This increases the relative pressure on European EV profitability, architecture cadence, and supply-chain competitiveness. BROAD ANALOG AND INDUSTRIAL SEMI TROUGH CONFIRMATION IS POSITIVE FOR CYCLICAL SEMI EXPOSURE (READ-THROUGH 10) Affected companies: Texas Instruments (TXN: USA), Analog Devices (ADI: USA), Microchip Technology (MCHP: USA), NXP Semiconductors (NXPI: USA), Infineon Technologies (IFX: Germany), STMicroelectronics (STMPA: France), Renesas Electronics (6723: Japan), Arrow Electronics (ARW: USA), Avnet (AVT: USA), WPG Holdings (3702: Taiwan), WT Microelectronics (3036: Taiwan). Directional impact and magnitude: Positive, medium for broad analog and mixed-signal semiconductor suppliers; positive, small to medium for distributors. Near-term trading catalyst with potential to become a multi-quarter fundamental recovery. Supporting call evidence: ON stated that order patterns, improving backlog visibility, and short-lead-time orders indicate the company is “moving away from the bottom of the cycle.” Lead times extended from approximately 23 weeks in Q4 to 26 weeks in Q1. Industrial revenue was down sequentially but ahead of expectations, with broad-based strength in traditional industrial for the 2nd consecutive quarter. Management also said mass market was up quarter-over-quarter and year-over-year, with approximately 35% growth, while distribution inventory remained within the target range at 10.8 weeks. Transmission mechanism: The call validates a broad analog and industrial semi recovery that appears driven by end-demand improvement rather than channel stuffing. Distribution inventory is stable, not excessive, while mass-market demand creation is improving. This is positive for Texas Instruments, Analog Devices, Microchip, NXP, Infineon, STMicroelectronics, and Renesas because these companies are highly sensitive to industrial order normalization, short-cycle demand recovery, and inventory digestion. Arrow, Avnet, WPG, and WT Microelectronics benefit from improving distributor demand creation, but the impact is moderated by ON’s statement that channel inventory should remain around 10-11 weeks rather than expanding aggressively. PRICING DISCIPLINE AND ALLOCATION ARE RETURNING BEFORE A FULL END-MARKET RECOVERY (READ-THROUGH 11) Affected companies: Texas Instruments (TXN: USA), Analog Devices (ADI: USA), Infineon Technologies (IFX: Germany), STMicroelectronics (STMPA: France), NXP Semiconductors (NXPI: USA), Microchip Technology (MCHP: USA), Tesla (TSLA: USA), Ford Motor (F: USA), General Motors (GM: USA), Deere & Company (DE: USA), Caterpillar (CAT: USA). Directional impact and magnitude: Positive, small to medium for analog and power semiconductor suppliers; negative, small for downstream auto and industrial OEMs due to component cost pressure. Near-term trading catalyst for semiconductor gross margins; medium-duration margin pressure for downstream customers where pass-through is limited. Supporting call evidence: Management said the pricing environment is “better than we anticipated walking into the year.” ON is passing higher commodity and energy costs through to customers and applying “surgical” pricing adjustments in constrained technologies. Management also stated that some technologies are already on allocation, and that customers placing orders without sufficient visibility may not receive supply. Transmission mechanism: Pricing power returning before a full automotive recovery is a favorable sign for semiconductor margins. Suppliers with differentiated, constrained, or long-lead-time analog and power products should be able to defend or raise pricing as utilization improves. This supports gross margin expansion for broad analog and power companies. The offset is modest BOM pressure for auto and industrial OEMs, especially where constrained technologies are required for EV traction, power conversion, factory automation, energy storage, or AI infrastructure. The call implies 2H margin improvement as pricing actions begin flowing through the P&L, making this a tangible earnings catalyst for semiconductor suppliers.

@thevalueistMay 4, 2026 · 10:31 PM

$ON (Bloomberg) -- ON Semiconductor shares are down 5.4% in extended trading, after the chipmaker reported first-quarter results that were slightly better than expected. It also gave an outlook that is largely in line with expectations. Bloomberg Intelligence wrote that the forecast suggests a recovery in key markets will be slower than hoped. The stock is coming off a gain of more than 60% in April, its biggest one-month gain since August 2003 Bloomberg Intelligence“Onsemi’s slightly above-consensus 1Q sales and 2Q outlook suggest cyclical industrial and auto end markets have stabilized, but the recovery will likely be slower than hoped” Click here for the report Truist Securities (hold, PT $66)The results beat expectations on key metrics, including revenue, earnings, and operating margins, although free cash flow was below the consensus The outlook is better than expected Evercore ISI (outperform, PT $80)The results are strong, while the outlook for revenue and gross margin are both positive SECOND QUARTER FORECAST Sees revenue $1.54 billion to $1.64 billion, estimate $1.53 billion (Bloomberg Consensus) Sees adjusted EPS 65c to 77c, estimate 67c Sees adjusted gross margin 38% to 40%, estimate 38.8% Sees adjusted operating expenses $287 million to $302 million, estimate $290.6 million FIRST QUARTER RESULTS Revenue $1.51 billion, +4.7% y/y, estimate $1.49 billionAnalog and mixed-signal group revenue $540.4 million, -4.6% y/y, estimate $542.8 million Power Solutions revenue $736.6 million, +14% y/y Intelligent Sensing Group Revenue $236.3 million, +0.9% y/y, estimate $241.2 million Adjusted EPS 64c vs. 55c y/y, estimate 61c Adjusted gross margin 38.5% vs. 40% y/y, estimate 38.5% Loss per share 8.0c vs. loss/shr $1.15 y/y Adjusted operating margin 19.1% vs. 18.3% y/y, estimate 19% R&D expenses $144.3 million, -12% y/y, estimate $140.4 million Adjusted operating expenses $293.7 million, -6.6% y/y, estimate $291.4 million

@investmentguru_May 4, 2026 · 11:18 AM

Earnings watchlist for the week: 𝗠𝗼𝗻𝗱𝗮𝘆 After Hours: $PLTR $FN $BWXT $AEIS $FLY $ADEA $ON 𝗧𝘂𝗲𝘀𝗱𝗮𝘆 Pre-Market: $SHOP $PYPL $ENLT $ETN After Hours: $AMD $ANET $LITE $ALAB $NVTS $NRGV $SU $WOLF 𝗪𝗲𝗱𝗻𝗲𝘀𝗱𝗮𝘆 Pre-Market: $UBER $FLEX $SOLS $NRG $HUT After Hours: $ARM $COHR $UUUU $FSLY $SEZL $AOSL $APP $IONQ $SNAP 𝗧𝗵𝘂𝗿𝘀𝗱𝗮𝘆 Pre-Market: $DAVE $HWM $VST $DDOG $BSKY After Hours: $NET $CRWV $RKLB $IREN $LASR $PDFS $OPEN 𝗙𝗿𝗶𝗱𝗮𝘆 Pre-Market: $WULF $UI

@investmentguru_Apr 24, 2026 · 11:13 AM

0DTE idea $AMD $MU $ON $QS $ARM

@investmentguru_Apr 24, 2026 · 9:58 AM

$ON — The Power Semi Comeback Nobody’s Pricing In On Semiconductor got crushed by the EV slowdown narrative — but the tide is turning fast. B. Riley just upgraded $ON to Buy with a $115 price target, nearly doubling from $64, betting the cyclical trough is behind the company with disciplined execution in power semiconductors, silicon carbide for EVs, and industrial automation set to drive the next leg higher. CEO El-Khoury flagged “clear signs of improvement across automotive, industrial, and AI infrastructure” — and Q1 2026 is projected to mark the first quarter of year-over-year revenue growth since the downturn started over three years ago. ON has responded to the downturn by pruning its portfolio, cutting costs, focusing on FCF generation, and building out AI power exposure — all while the stock still trades at a deep discount to peers. The pain is priced in. The recovery isn’t. Not financial advice.

@vulturetradesApr 16, 2026 · 3:07 PM

The $ON 75c for next week are up 300% at 5.75 from 1.45 🦅

@vulturetradesApr 16, 2026 · 1:36 PM

Wow we just printed on our $ON swings 😂 Who else is doing this Are you listening yet? https://t.co/eUqA68LNIc

@vulturetradesApr 16, 2026 · 1:33 PM

$ON 75C UP 150% HERE at 3.83 from 1.45 https://t.co/83sZ8pPRoh

@vulturetradesApr 16, 2026 · 1:32 PM

$ON 73C UP 250% AT OPEN OMG https://t.co/gCSn7QSZIv

@vulturetradesApr 16, 2026 · 1:31 PM

$ON up huge at open wow

@vulturetradesApr 14, 2026 · 6:02 PM

$BE $ARM $ANET $ON and many many more Make sure to have notifications on

@vulturetradesApr 14, 2026 · 3:45 PM

$ON this is one of those setups

@vulturetradesApr 14, 2026 · 3:45 PM

High Confidence $ON 75 Call 4/24 at 1.45 🚨

@vulturetradesApr 14, 2026 · 3:44 PM

$ON next weeks contracts swing 🚨

@vulturetradesApr 14, 2026 · 3:43 PM

$ON 75 Call 4/24 at 1.45 🚨

@vulturetradesApr 14, 2026 · 3:33 PM

$ON 40% at 1.24 from 0.93 wow https://t.co/AZ0xyZeHdp

@vulturetradesApr 14, 2026 · 3:29 PM

$STM & $ON are the next $BE Heard it here first

@vulturetradesApr 14, 2026 · 3:15 PM

$ON ripping wow Are you not entertained?

@vulturetradesApr 14, 2026 · 3:10 PM

$ON this can rip to $74 this week

@vulturetradesApr 14, 2026 · 3:09 PM

High Confidence 🚨 $ON 73 Call 4/17 at 0.93

@vulturetradesApr 14, 2026 · 3:09 PM

$ON 73 Call 4/17 at 0.93 🚨

@mrmikeinvestingMar 7, 2026 · 11:41 PM

THE ROBOTICS STACK EXPLAINED: 1. $NVDA & $QCOM provide the vision processors, & compute silicon to allow robots to process data, & make real time decisions. 2. $GOOGL, $MSFT & $META supply the foundation models to give robots reasoning, perception, & interaction abilities. 3. $PLTR, $ORCL & $MSFT convert massive robot fleet data into actionable intelligence while $PANW & $CYBR secure the systems. 4. $ARM, $SNPS & $CNDS design the chips powering robot brains. 5. $MBLY & $TDY provide the vision systems, cameras, & perception sensors to allow robots to understand the world. 6. $MP supplies rare earth magnets used in electric motors to move robotic systems. 7. $ADI, $ON & $STM provide the analog semiconductors that connect digital AI systems to motors, sensors, & power electronics. 8. $ST, $RRX & $TKR manufacture the bearings, motors, & mechanical components for robots. 9. $HON & $ROK deliver the industrial automation platforms that integrate robotics into factories. 10. $TSLA, $AAPL, $BABA & $AMZN are building competing robotic ecosystems across manufacturing, logistic, and mobility applications. It’s clear the expansion within the robotics layer is wide, & many names are responsible for this sector boom…

@ftr_investorsFeb 25, 2026 · 11:29 AM

Morgan Stanley’s Top 25 Humanoid Robots 🤖 🧠 Brain (AI & chips) $BIDU $BABA $NVDA $TXN $AMD $ARM $SNPS $CDNS $SSNLF 👀 Eyes (sensors & vision) $SONY $MCHP $AMBA $ON $SSNLF 🦾 Body (power & motion control) $NXPI $STM $TXN $HSAI $RNECY $IFNNY $ROHCY $ALGM $MELE Which of these stocks are on your radar? 🚀

@ftr_investorsJan 9, 2026 · 6:43 PM

The Future Investors presents the 40 quality stocks with the highest projected EPS growth for 2026! 💎🚀 1. $BESI | BE Semiconductor - 93.4% 2. $ONON | On Holding - 79.0% 3. $AMD | AMD - 63.6% 4. $SPOT | Spotify - 62.3% 5. $NVDA | Nvidia - 61.3% 6. $FSLR | First Solar - 60.7% 7. $SOFI | SoFi - 56.7% 8. $NKE | Nike - 49.9% 9. $MELI | MercadoLibre - 48.5% 10. $RHM | Rheinmetall - 46.8% 11. $TER | Teradyne - 45.9% 12. $SE | Sea Limited - 44.7% 13. $NU | Nu Holdings - 43.8% 14. $ADS | Adidas - 43.6% 15. $CCO | Cameco - 41.8% 16. $RDDT | Reddit - 41.5% 17. $PLTR | Palantir - 39.5% 18. $LLY | Eli Lilly - 38.8% 19. $LSCC | Lattice Semiconductor - 38.5% 20. $AVGO | Broadcom - 38.5% 21. $IFX | Infineon - 37.6% 22. $CRDO | Credo Technologies - 34.0% 23. $APP | AppLovin - 33.8% 24. $ALAB | Astera Labs - 33.3% 25. $PEN | Penumbra - 33.2% 26. $ARM | Arm - 32.2% 27. $GWRE | Guidewire - 30.7% 28. $VRT | Vertiv - 28.1% 29. $NFLX | Netflix - 28.1% 30. $SHOP | Shopify - 27.3% 31. $MRVL | Marvell - 26.7% 32. $PODD | Insulet - 26.5% 33. $FICO | Fair Isaac - 26.2% 34. $AS | Amer Sports - 25.7% 35. $WDC | Western Digital - 25.4% 36. $ON | On Semiconductor - 25.0% 37. $TSM | TSMC - 23.5% 38. $MU | Micron - 23.4% 39. $DASH | DoorDash - 23.1% 40. $ADYEN | Adyen - 22.6% 𝗖𝗿𝗶𝘁𝗲𝗿𝗶𝗮 - Gross Margin >30% - Net income margin >0% - FCF+ - Altman Z-Score >3 - Marketcap >$10B What are your favourite stocks for 2026? 🤔🚀

@ftr_investorsDec 24, 2025 · 6:51 PM

The Future Investors presents the 40 stocks with the highest projected revenue growth for 2026! 📈🚀 1. $NBIS | Nebius - 521.1% 2. $IREN | IREN - 134.6% 3. $NVDA | Nvidia - 49.8% 4. $PLTR | Palantir - 43.3% 5. $BESI | BE Semiconductor - 42.8% 6. $ALAB | Astera Labs - 42.2% 7. $CRDO | Credo Technologies - 40.1% 8. $RDDT | Reddit - 38.7% 9. $AVGO | Broadcom - 35.9% 10. $APP | AppLovin - 35.6% 11. $CLS | Celestica - 33.4% 12. $RHM | Rheinmetall - 32.2% 13. $FIGR | Figure Tech Solutions - 31.9% 14. $NU | Nu Holdings - 31.8% 15. $CELH | Celsius Holdings - 31.6% 16. $AMD | AMD - 31.5% 17. $BE | Bloom Energy - 31.3% 18. $LITE | Lumentum Holdings - 31.2% 19. $PRX | Prosus - 31.2% 20. $TKO | TKO Group - 29.8% 21. $DASH | DoorDash - 29.8% 22. $MELI | MercadoLibre - 29.1% 23. $ORCL | Oracle - 28.4% 24. $DY | Dycom - 27.6% 25. $CVNA | Carvana - 27.3% 26. $BROS | Dutch Bros - 25.7% 27. $AXON | Axon - 25.5% 28. $SOFI | SoFi - 25.3% 29. $KRMN | Karman Holdings - 24.9% 30. $AFRM | Affirm - 24.6% 31. $FTAI | FTAI Aviation - 24.4% 32. $SE | Sea Limited - 24.2% 33. $SHOP | Shopify - 23.5% 34. $BRO | Brown & Brown - 23.3% 35. $TER | Teradyne - 23.0% 36. $ON | On Holding - 22.6% 37. $DUOL | Duolingo - 22.6% 38. $ANET | Arista Networks - 22.4% 39. $SMCI | Super Micro Computer - 22.2% 40. $ADYEN | Adyen - 22.0% Source: @KoyfinCharts 𝗖𝗿𝗶𝘁𝗲𝗿𝗶𝗮 - Revenue TTM >$250M - Net income margin >0% - Altman Z-Score >3 - Marketcap >$8B What are your favourite growth stocks for 2026? 🤔🚀

@semianalysis_Aug 7, 2025 · 9:09 PM

expecting a recovery this cycle with $TXN $MCHP $ON $NXPI pls bro just one more quarter bro https://t.co/r0aA15h4ve